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Samsung HBM4/HBM4E Output Expansion

Samsung is reportedly set to more than double HBM4 and HBM4E DRAM output next year to meet surging AI chip demand, according to sources cited by Sedaily. The expansion is a key data point in the broader AI memory supply chain race against SK Hynix and Micron.

Importance: 55%Confidence: 65%Mentions: 1Updated: September 21, 2026Page history (1 revision) →

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## Overview Samsung is expected to more than double output of its HBM4 and HBM4E DRAM chips next year, according to sources cited by (Sedaily, September 20). HBM (High Bandwidth Memory) is critical to AI accelerator chips, and HBM4/HBM4E represent the next generation used in advanced AI GPUs and custom silicon. ## Details The capacity expansion reflects intensifying demand for AI memory chips amid the ongoing AI infrastructure buildout. Samsung competes with SK Hynix and Micron for HBM market share, all of which have seen valuations surge amid AI memory demand (see related: Micron & SK Hynix $1 Trillion Valuation Milestone). ## Why It Matters - **Supply chain**: HBM4/HBM4E capacity directly gates the pace of Nvidia, AMD, and custom AI chip production; expansion eases a key bottleneck in AI compute scaling. - **Competitive dynamics**: Samsung's move intensifies the three-way race with SK Hynix and Micron, all racing to secure hyperscaler contracts (AWS, Google, Microsoft, Meta, OpenAI). - **Pricing**: Increased supply could stabilize or reduce memory chip prices, which have been a factor in AI infrastructure cost inflation throughout 2026. - **Geopolitics**: Ties into broader Korea-China chip competition narratives (ChangXin Memory Technologies, Chinese memory chip makers' IPO push). ## Outlook Watch for confirmation of specific volume targets, customer allocation (Nvidia, AMD, hyperscalers), and whether expansion eases the broader 'memory chip supply crunch' narrative tied to AI demand.